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A Feedforward Active Gate Voltage Control Method for SiC MOSFET Driving

Document Type : Research article

Authors

MCIA-Motion Control and Industrial Applications, Universitat Politècnica de Catalunya, Barcelona, Spain

Abstract

A new active gate drive for Silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) is proposed in this paper. The SiC MOSFET as an attractive replacement for insulated gate bipolar transistor (IGBT) has been regarded in many high power density converters. The proposed driver is based on a feedforward control method. This simple analog gate driver (GD) improves switching transient with minimum undesirable effect on the efficiency. This paper involves the entire switching condition (turn on/off), and the GD is applied to the SiC base technology of MOSFET. To evaluate the performance of the proposed GD, it will be compared with a conventional gate driver. The presented GD is validated by experimental tests. All the evaluations are carried out in a hard switching condition and at high-frequency operation. 

Highlights

  • A new active gate drive for Silicon carbide (SiC) MOSFET is proposed
  • The proposed driver is based on a feedforward control method
  • This simple gate driver improves switching transient
  • The driver evaluated in hard switching conditions and at high-frequency operation

Keywords

Main Subjects

References
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Journal of Applied Research in Electrical Engineering
Volume 2, Issue 1
Winter and Spring 2023
January 2023
Pages 87-94
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History
  • Receive Date: 08 January 2022
  • Revise Date: 09 January 2023
  • Accept Date: 19 February 2023
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